vishay tlhg / p / y5800 document number 83013 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 1 e2 pb pb-free 19223 high efficiency led, ? 5 mm untinted non-diffused description the tlh.5800 series was developed for standard applications which need a very small radiation angle or a very high luminous intensity. it is housed in a 5 mm untinted non-diffused plastic package. the very small viewing angle of these devices provide a very high luminous intensity. the yellow and green leds are categorized in lumi- nous intensity and additionally in wavelength groups. that allows users to assemble leds with uniform appearance. features ? standard t-1? package small mechanical tolerances suitable for dc and high peak current very small viewing angle very high intensity luminous intensity categorized yellow and green color categorized lead-free device applications status lights off / on indicator lightpipe outdoor display medical instruments maintenance lights legend lights parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlhy5800 , TLHG5800 , tlhp5800 part color, luminous intensity angle of half intensity ( ? ) technology tlhy5800 yellow, i v > 100 mcd 4 gaasp on gap TLHG5800 green, i v > 400 mcd 4 gap on gap tlhp5800 pure green, i v > 25 mcd 4 gap on gap parameter test condition symbol value unit reverse voltage v r 6v dc forward current t amb 65 c i f 30 ma surge forward current t p 10 si fsm 1a power dissipation t amb 65 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 350 k/w
www.vishay.com 2 document number 83013 rev. 1.4, 31-aug-04 vishay tlhg / p / y5800 vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified yellow tlhy5800 1) in one packing unit i vmin /i vmax 0.5 green TLHG5800 1) in one packing unit i vmin /i vmax 0.5 pure green tlhp5800 1) in one packing unit i vmin /i vmax 0.5 parameter test condition symbol min ty p. max unit luminous intensity 1) i f = 20 ma i v 100 250 mcd dominant wavelength i f = 10 ma d 581 594 nm peak wavelength i f = 10 ma p 585 nm angle of half intensity i f = 10 ma ? 4 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit luminous intensity 1) i f = 20 ma i v 400 700 mcd dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma ? 4 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit luminous intensity 1) i f = 20 ma i v 25 85 mcd dominant wavelength i f = 10 ma d 555 565 nm peak wavelength i f = 10 ma p 555 nm angle of half intensity i f = 10 ma ? 4 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf
vishay tlhg / p / y5800 document number 83013 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature figure 3. forward current vs. pulse length 0 25 50 75 100 125 95 10918 p - power dissipation ( mw ) v t amb ? ambient temperature ( c) 0 100 80 60 40 20 0 10 20 30 40 60 95 10046 50 i - forward current ( ma ) f 0 100 80 60 40 20 t amb ? ambient temperature ( c) 0.01 0.1 1 10 1 10 100 1000 10000 100 95 10025 0.02 0.05 0.1 0.2 1 0.5 t amb 85 c t p /t = 0.01 i C forward current ( ma ) f t p C pulse length ( ms ) figure 4. rel. luminous intensity vs. angular displacement figure 5. forward current vs. forward voltage figure 6. rel. luminous intensity vs. ambient temperature 0.4 0.2 0 0.2 0.4 0.6 95 10022 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity v rel 0.1 1 10 100 1000 10 8 6 4 2 0 95 10030 v f - forward voltag e(v) i - forward current ( ma ) f yellow t p /t = 0.001 t p =10 s 0 0 0.4 0.8 1.2 1.6 95 10031 20 40 60 80 100 i - relative luminous intensity v rel t amb - ambient temperature ( c) yellow i f =10ma
www.vishay.com 4 document number 83013 rev. 1.4, 31-aug-04 vishay tlhg / p / y5800 vishay semiconductors figure 7. rel. lumin. intensity vs. forw. current/duty cycle figure 8. relative luminous intensity vs. forward current figure 9. relative intensity vs. wavelength yellow 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10260 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i - relative luminous intensity v rel 2.0 yellow i f - forward current ( ma ) 100 0.1 1 10 95 10033 i - relative luminous intensity v rel 10 1 0.01 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 - - wavelength ( nm ) 1.0 yellow i - relative luminous intensity vrel figure 10. forward current vs. forward voltage figure 11. rel. luminous intensity vs. ambient temperature figure 12. specific luminous intensity vs. forward current 0.1 1 10 100 1000 10 8 6 4 2 0 95 10034 v f - forward voltag e(v) i - forward current ( ma ) f green t p /t = 0.001 t p =10 s 0 0.4 0.8 1.2 1.6 95 10035 i - relative luminous intensity v rel green i f =10ma t amb - ambient temperature ( c) 20 40 60 80 0 100 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10263 500 v rel 2.0 green i - specific luminous intensity i f (ma) 0.5 0.2 0.1 0.05 0.02 1 t p /t
vishay tlhg / p / y5800 document number 83013 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 5 figure 13. relative luminous intensity vs. forward current figure 14. relative intensity vs. wavelength figure 15. forward current vs. forward voltage i f - forward current ( ma ) 100 green 0.1 1 10 95 10037 i - relative luminous intensity v rel 10 1 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 - - wavelength ( nm ) 1.0 green i - relative luminous intensity vrel 01234 0.1 1 10 100 5 95 9988 pure green f i ?f orward current ( ma ) v f ? forward voltag e(v) figure 16. rel. luminous intensity vs. ambient temperature figure 17. specific luminous intensity vs. forward current figure 18. relative luminous intensity vs. forward current 0 0.4 0.8 1.2 1.6 2.0 95 9991 pure green i - relative luminous intensity vrel t amb ? ambient temperature ( c) 0 100 80 60 40 20 95 10261 10 1000 100 0 0.4 0.8 1.2 1.6 2.4 2.0 pure green i - specific luninous flux spec i f - forward current ( ma ) 0.01 0.1 1 10 100 10 1 95 9998 pure green i - relative luminous intensity vrel i f - forward current ( ma )
www.vishay.com 6 document number 83013 rev. 1.4, 31-aug-04 vishay tlhg / p / y5800 vishay semiconductors package dimensions in mm figure 19. relative intensity vs. wavelength 500 520 540 560 580 0 0.2 0.4 0.6 0.8 1.2 600 95 10325 1.0 pure green - wavelength ( nm ) i - relative luminous intensity vrel 95 11476
vishay tlhg / p / y5800 document number 83013 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 7 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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